feb.1999 mitsubishi transistor modules QM50DY-HB medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, ups, dc motor controllers, nc equipment, welders QM50DY-HB ? i c collector current .......................... 50a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 94 80 20 20 20 34 13 c 2 e 1 e 2 c 1 2? f 6.5 tab#110, t=0.5 6.5 4 18 4 22.5 31 (8) c 1 c 2 e 1 e 2 e 2 e 1 b 1 b 2 e 2 e 1 b 1 b 2 3?5 7 20 16 20 4 4 label
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m5 mounting screw m6 typical value ratings 600 600 600 7 50 50 310 3 500 C40~+150 C40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =50a, i b =67ma Ci c =50a (diode forward voltage) i c =50a, v ce =2.5v v cc =300v, i c =50a, i b1 =100ma, i b2 =C1.0a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 1.0 1.0 80 2.5 3.0 1.8 2.0 8.0 3.0 0.4 1.3 0.15 mitsubishi transistor modules QM50DY-HB medium power switching use insulated type
feb.1999 0 10 ? 10 ? 10 ? 10 0 10 ? 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.2 2.6 3.0 3.4 3.8 4.2 v ce =2.5v t j =25? 100 80 60 40 20 0 012345 t j =25? i b =150ma i b =100ma i b =50ma i b =10ma i b =20ma 4 10 7 5 4 3 2 3 10 7 5 4 3 2 2 10 0 10 23457 1 10 23457 2 10 v ce =2.5v t j =25? t j =125? v ce =5.0v 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 v ce(sat) v be(sat) t j =25? t j =125? i b =67ma 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 444 i c =10a t j =25? t j =125? i c =50a i c =25a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 t f t on t j =25? t j =125? i b2 =?.0a v cc =300v i b1 =100ma t s performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM50DY-HB medium power switching use insulated type
feb.1999 0 10 ? 10 ? 10 ? 10 1 10 0 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 ? 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 ? 10 23457 0 10 23457 1 10 t j =25? t j =125? v cc =300v i c =50a i b1 =100ma t f t s 160 40 0 0 100 800 120 80 300 400 500 140 100 60 20 t j =125? i b2 =?.5a i b2 =?.5a 200 600 700 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.2 0.6 1.0 1.4 1.8 2.2 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.1 0 444 23457 0.2 3 245 7 collector dissipation second breakdown area 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t c =25? 1ms dc 10ms 100? 500? non?epetitive switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM50DY-HB medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 1 10 0 10 ? 10 ? 10 ? 10 0 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 ? 10 2 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 7 5 3 2 7 5 3 2 7 5 3 2 2.0 1.6 1.2 0.8 0.4 0 444 23457 3 2 7 5 4 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 i rr t rr q rr i b2 =?.0a t j =25? t j =125? v cc =300v i b1 =100ma i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode ) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM50DY-HB medium power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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